| PART |
Description |
Maker |
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF1100 BF1100R |
Dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
|
| BF1101WR BF1101R BF1101 BF1101-2015 BF1101-15 |
N-channel dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF908 BF908-R-2015 BF908-R-15 |
Dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 2SJ0536 |
Small-signal device - Small-signal FETs - MOS FETs
Silicon MOS FETs (Small Signal)
SMini3-G1
From old datasheet system
|
Matsshita / Panasonic
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
